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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB950A DESCRIPTION *High DC Current Gain: hFE= 2000(Min.)@IC= -3A *High Speed Switching *Complement to Type 2SD1276A APPLICATIONS *Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 -8 A 2 W PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 40 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat)-1 VCE(sat)-2 VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= -30mA ; IB= 0 IC= -3A; IB= -12mA B 2SB950A MIN -80 TYP. MAX UNIT V -2.0 -4.0 -2.5 -0.2 -0.5 -2.0 1000 2000 20 10000 V V V mA mA mA IC= -5A; IB= -20mA B IC= -3A ; VCE= -3V VCB= -100V ; IE= 0 VCE= -40V ; IB= 0 B VEB= -5V ; IC= 0 IC= -0.5A ;VCE= -3V IC= -3A ; VCE= -3V IC=-0.5A;VCE= -10V;ftest=1MHz MHz Switching times ton tstg tf Turn-on Time Storage Time Fall Time IC= -3A,IB1= -IB2= -12mA, VCC= -50V 0.3 2.0 0.5 s s s hFE-2 Classifications Q 2000-5000 P 4000-10000 isc Websitewww.iscsemi.cn 2 |
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